Core Advantages:
Nanometer Precision:
Strictly controlled particle size distribution ensures low-damage cutting surfaces.
High Purity:
High product purity, non-magnetic, eliminates wafer contamination risks.
Controlled Sharpness:
High proportion of highly active crystal forms with optimized edge geometry, effectively enhancing dicing efficiency.
Consistent Quality:
Robust quality management system with strict monitoring of key parameters ensures batch-to-batch stability. Available Particle.
Size Specifications:
Semiconductor Cutting Special Micro Powder(μm) |
4.0 | 5.0 | 5.5 | 6.0 | 6.5 | 7.0 | 7.5 | 9.0 | 10.0 |
Provide sub-micron level process guarantee for the third-generation semiconductor materials (SiC/GaN) and large-size wafer dicing,
helping to achieve a leap in wafer dicing accuracy and yield.



